Quality and Applications of In(Ga) AIAs-Layers

In the last few years the InGaAlAs material system received increasing interest for application in integrated optoelectronic devices. We present an analysis of layer and surface quality of MBE-grown InAlAs material, a systematic improvement of Schottky contacts characterized by electrical measurements and finally, the fabrication of MeSFET (Metal Semiconductor Field Effect Transistors), DHBT (Double Heterostructure Bipolar Transistors) and rib waveguide devices.