GaAs FET and HFET on InP substrate

GaAs FET and HFET structures have been grown by mismatched MOVPE epitaxy on InP substrates and processed using conventionnal technology. These transistors exhibit characteristics comparable to those measured on GaAs substrate. Ft and Fmax values of 12 and 30 GHz are measured on 1μm MESFET. Intrinsic transconductance greater than 250 mS/mm have been extracted for 1μm gatelength DMT.