Complementary silicon JFETs using novel ultra-shallow gate junctions

Measurements on normally-off type junction field effect transistors (JFET's) of both n- and p-type for low power applications are presented. A new method, using ultra-shallow gate junctions, when integrating p-and n-type JFET's to form a complementary JFET (CJFET) structure is proposed and a suitable technology is presented. The ultra-shallow gate junctions used in the devices are formed by low temperature diffusion of boron and antimony in amorphous silicon. Electrical characterisations and SIMS measurements on these ultra-shallow gate junctions are also presented.