A permeable base transistor on Si(100) with implanted COSi2-gate

A permeable base transistor (PBT) has been fabricated by local implantation of
⁵⁹
Co into Si(100) with subsequent rapid thermal annealing and epitaxial growth of silicon by LPVPE. Transmission electron microscopy shows abrupt interfaces between the buried CoSi
2
and the adjacent silicon. Rutherford backscattering and channeling experiments with a minimum yield of 5.3% for the Co signal as well as a specific resistance of 13 μohmcm of the CoSi
2
layers demonstrate the good quality of the Si/CoSi
2
/Si heterostructure. Si/CoSi
2
Schottky diodes revealed ideality factors of 1.01, while PBTs with 1.5 μm gratings exhibited a maximum transconductance of 11mS/mm.