Reflectivity measurements in a rapid thermal processor: application to silicide formation and solid phase regrowth

Time resolved reflectivity is first applied to the measurement of the solid phase epitaxial growth rate of As
⁺
(60 keV, 4.10
¹⁵
cm
^-2
) implanted (100) Si wafers and then to the study of platinum silicide formation when samples of platinum films deposited on top of silicon wafers are annealed in a rapid thermal processor. The thermal cycles consist of a fast heating phase followed by an isothermal plateau. For both experiments, activation energies are calculated and in situ reflectivity monitoring is shown to be a powerful end point detection means in a rapid thermal processor.