A new stacked capacitor cell for 64 Mbit DRAMs

A new stacked capacitor memory cell named a Cup-shaped Storage Node (CSN) is proposed for high density DRAMs. The storage capacitance of the cell is enhanced by stacking the cup shaped polysilicon layer. So single and double layered stacked cell structures can be fabricated with simple extra process steps. The usefulness of the fabrication process and electrical characteristics of this novel cell structure has been demonstrated.