A New Technological Process to Realize InGaAsP/InP Semi-Insulating Buried Heterostructure Lasers Emitting at 1.55 μm

We have developed a new technological process, based on MOCVD growth technique, to realize SI-BH (Semi Insulating-Buried Heterostructure) semiconductor laser emitting at 1.55 μm. A SI-BH laser is attractive for high speed operation and mass production. In fact, due to the high resistivity of the Fe-doped (semi-insulating) InP blocking layer, leakage current and parasitic capacitance can be minimized.