Strain Relaxation Due to Phosphorus Implantation into Strained Si/SiGe/Si Heterostructure

Ion implantation has been established as an important process tool to introduce precise amount of dopants into semiconductors. However, it is known to create several defects in the form of point defects and misfit dislocations. Annealing is generally performed to achieve dopant activation which also minimizes channeling tails and decrease residual extended defect densities. In this paper we have reported the annealing behavior of phosphorus implanted into strained SiGe layer at room temperature. The implantation was performed at 155 KeV with a dose of 1 × 10
¹⁴
/cm
²
. Post implantation annealing was performed at 600, 700, 800 and 900°C for 10 seconds in a Rapid Thermal Process furnace. I-V, C-V and DLTS measurements hint towards presence of permanent dislocation loops created as a consequence of implantation and annealing.