Impact of Gate Recess Offset on Pseudomorphic HEMT Performance: A Simulation Study

In this paper, using carefully calibrated numerical simulations, we investigate the effect of the gate recess offset in short channel Pseudomorphic HEMTs (PsHEMTs) on the small signal equivalent circuit components and on the overall device performance. We found that although the cut-off frequency fT of the investigated PsHEMTs has a maximum at 30 nm recess offset, f
max
increases monotonously with the lateral extension of the offset.