Single-Wafer, SiGe Heterostructures Grown by Cold Wall UHV-CVD: Application to Hetero-Junction Bipolar Transistor (HBT) Fabrication

HBT layers have been fabricated using a multi-step process in a single run. They were made in a new, single-wafer, 200 mm compatible, cold wall UHV-CVD reactor [1]. Preliminary electrical measurements on fabricated transistors demonstrate excellent control of layers thickness and doping transitions which allows to compare these HBT layers with those fabricated by MBE [2] or hot-wall UHV-CVD [3].