Characterization of Transient Effects in the S-Parameters of GaAs MESFETs by Means of Pulsed Measurements

This paper presents a characterization of the main transient phenomena affecting the S-parameters of GaAs MESFETs, carried out by means of an innovative Six Port Network Analyzer operated in burst mode. The results, interpreted using established models of the small signal MESFET behavior, indicate that the transient effects observed in the S-parameters must be attributed to changes in the device transconductance and output conductance, while minor anomalies affect the input, output and feedback capacitance.