High Carrier Density and Mobility in GaAs/InGaAs/GaAs Double delta-doped Channels Heterostructures

Double quantum well with δdoped lattice-strain GaAs/InGaAs/GaAs pseudomorphic heterostructures have been fabricated for the first time. Very high carrier density of more than 1x10
¹³
cm
^-2
along with enhanced mobility of 2100 cm
²
/vs at 300K are achieved. Influence of barrier thickness on the carrier densities and mobilities are also investigated.