High Current Gain Lateral Bipolar Action in DMOS Transistors

This paper describes a new operation mode of the DMOS transistor. By utilizing the diffused channel region as base and connecting it to the gate, hybrid lateral bipolar operation is obtained in the device. Current gain higher than 2000 and a cut-off frequency of 1.6 GHz are achieved. Superior breakdown voltages were obtained compared to previously published hybrid devices. It is demonstrated that hybrid operation of a DMOS transistor is a simple way to implement a high gain lateral bipolar transistor, without complex sub-μ processing.