Mechanisms of Hot-Carrier Degradation of Analog Device Parameters in n-MOSFETs

Hot-carrier (HC) degradation of analog operation parameters has been investigated by stressing LDD-n-MOSFETs with channel lengths of 1.0-5.0 μm. A model has been developed to clarify the different mechanisms leading to degradation of the differential drain output resistance. Experimental evidence is given to check the model. Finally, possible consequences in the circuit environment are discussed.