Random Telegraph Signal related low-frequency noise peaks in submicrometer Si MOST's

This paper discusses die low-frequency noise behaviour corresponding to Random Telegraph Signals in submicrometer Si MOSTs. It is shown that when the noise spectral density is measured as a function of the gate voltage (linear operation) or of the drain voltage, peak-shaped features are generally obtained. This excess-noise peak can be used to identify the occurrence of RTS, for instance in Silicon-on-Insulator MOSTs, and is useful in extracting the RTS parameters, i.e. its capture and emission time constant and the amplitude.