Correlation between spectroscopic reflectrometry and electrical measurements of SIMOX SOI film thickness

A non-destructive tool, based on spectroscopic reflectrometry, is presented. This technique allows accurate mapping (80 points) of the silicon overlayer as well as the buried oxide layer in a matter of minutes. The results are correlated with electrical film thickness measurement techniques. In addition,the sensitivity of threshold voltage and drive current on the silicon overlayer thickness is discussed.