Shallow junction formation using MoSi2 as diffusion source

Arsenic and boron implanted MoSi
2
layers as diffusion source for the formation of n
⁺
/p and p
⁺
/n ultra-shallow junctions, respectively, are investigated. The high arsenic diffusivity and solubility in MoSi
2
, as well as the favorable arsenic segregation coefficient at the silicide silicon interface, make Mo-silicide suitable as arsenic diffusion source and allow the formation of n
⁺
/p junctions as shallow as 100 nm with high surface carrier concentration. On the contrary, the low boron mobility in MoSi
2
, probably due to boron-molybdenum compounds, make ineffective the Mo-silicide as boron diffusion source.