Boron diffusion effects from p+ polysilicon gate in thin thermal oxide and plasma nitrided oxide

The effects of boron diffusion into thermal and plasma nitrided thin oxide are studied on p+ poly gate capacitors. For N
2
anneal at 950°C longer than 30 mn, interface state generation, enhanced electron trapping rate and reduction in Qbd are found for the non-nitrided oxide. Light plasma nitridation suppresses these detrimental effects while preserving the integrity of the Si/SiO
2
interface.