Electrical behaviour of Junctions obtained by rapid thermal annealing of BF2 implanted layers

The rapid thermal annealing of BF
2
implanted layers has been studied for what concerns its impact on the electrical behaviour of p
⁺
-n junctions. The evolution of current-voltage characteristics of junctions with increasing temperature of treatment has been followed. Assuming that this evolution reflects the annealing of the implantation damage, a characterization of these junctions versus device temperature provides informations about generation-recombination phenomena related to the residual implantation damage.