10Gb/s 15mW optical receiver with integrated Germanium photodetector and hybrid inductor peaking in 0.13µm SOI CMOS technology

A 10 Gb/s optical receiver with an integrated germanium photodetector is presented. The receiver is fabricated in a silicon-photonics-enabled 0.13 μm SOI CMOS technology. The high-speed circuits consume 15 mW, achieving sensitivity of 6 μA p-p at BER = 10
^-12
with less than 5 ps of DJ. Photodetector dark current is 3 μA at a reverse bias of 1 V, and responsivity is 0.8 A/W.