Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs

The contact and external series resistances play an important role in the performance of modern 0.1-0.2 /spl mu/m HEMT's. It is not possible to include these resistances directly into the Monte Carlo simulations. Here we describe a simple and efficient way to include the external series resistances into the Monte Carlo results of the intrinsic device simulations. Examples of simulation results are given for a 0.2 /spl mu/m pseudomorphic HEMT.