Influence of boundary force on the performance of gate-all-around Ge (110) NW FETs with HfO2 gate insulator

We calculate valence band structures and transport property of HfO
2
gate dielectric surrounded Ge (110) nanowire with a radial force at the boundary of the insulator. The radial force pushes the valence subbands downwards. Most of hole effective masses of top five subbands decrease and densities of states' peaks move down as the force increases. The hole mobility in Ge (110) NW significantly increases with higher force values.