High performance low voltage amorphous oxide TFT Enhancement/Depletion inverter through uni-/bi-layer channel hybrid integration

A novel amorphous oxide TFT Enhancement/Depletion (E/D) inverter through uni-/bi-layer channel hybrid integration with conventional process is demonstrated. The device's threshold voltages (V
th
) is strictly controlled and the fabrication technique is specially designed. Comparing to the reported high speed bootstrapped inverter, the output swing, switching voltage gain and noise margin of E/D inverter are greatly improved and only the ring oscillator's speed is slightly degraded while with a small supply voltage of 5V.