One-transistor nonvolatile SRAM (ONSRAM) on silicon nanowire SONOS

A one-transistor nonvolatile SRAM (ONSRAM) on a silicon nanowire (SiNW) SONOS is demonstrated. A nonvolatile memory (NVM) property is attained by employment of O/N/O gate dielectric stacks as an electron storage node, and SRAM functionality is achieved by exploiting latch phenomena of a floating body in SiNW. Abrupt inverter switching, superior sensing current (≥21µA), and robust interference immunity between SRAM and NVM verify the feasibility for the suggested ONSRAM.