Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs

We proposed a new method for characterization of oxide traps leading to Random Telegraph Noise (RTN) in high-k and metal gate MOSFETs considering their energy band structure. Through this method and drain and gate current RTN measurement, we extracted positions, energy levels and activation energies of oxide traps in high-k dielectric as well as in interfacial layer.