Sleep transistor forward body bias: An Extra Knob to lower ground bouncing noise in MTCMOS circuits

A new forward body bias technique is proposed in this paper to minimize the ground bouncing noise with smaller sleep transistors in MTCMOS circuits. The new forward body bias technique lowers the peak ground bouncing noise by up to 15.43% while reducing the size of the additional sleep transistors by up to 52.38% as compared to the previously published noise-aware MTCMOS techniques with standard zero-body-biased sleep transistors in a 90 nm CMOS technology. The design tradeoffs between the ground bouncing noise and the leakage power consumption in body-biased MTCMOS circuits are evaluated.