Fabrication and improved characteristics of self-aligned dual-gate single-electron transistors

Dual-gate single-electron transistors were fabricated on the silicon-on-insulator (100). Although the structure of the dual-gate single-electron transistors was previously introduced, several process parameters were modulated in this work to reduce the total capacitance of the quantum dot and increase the operation temperature. In the room-temperature transfer characteristics of the fabricated device, Coulomb oscillation peaks were visible, which indicates decrease in the quantum dot size compared to previous work.