Short-Circuit Capability of SiC Buried-Gate Static Induction Transistors: Basic Mechanism and Impacts of Channel Width on Short-Circuit Performance

Fundamental short-circuit operations of silicon carbide static induction transistors with buried-gate structures (BGSITs) were experimentally clarified, with subsequent device simulations. The impacts of channel width and source length on short-circuit capabilities were investigated. In particular, a design concept of the channel width was proposed to improve the short-circuit energy without a serious increase in on-resistance. The maximum short-circuit capability of the fabricated BGSITs was 18 J/cm
²
at room temperature, which shows excellent performance compared with that of conventional Si insulated-gate bipolar transistors.