Fabrication and opto-electric properties of silicon based heterojunction SIS cells

ITO/AZO double films were deposited by RF sputtering on p-Si texturized substrate to fabricate ITO/AZO/SiO
₂
/p-Si SIS heterojunction. The structural, optics and electrical properties of the ITO/AZO films were characterized by UV-VIS spectrophotometer, four point probe, respectively. The results show that ITO/AZO films have good quality. The electrical junction properties were investigated by I-V measurement, which reveals that the heterojunction shows typical good rectifying behavior and great photoelectric effect.