In-situ post-deposition thermal annealing of co-evaporated Cu(InGa)Se2 thin films deposited at low temperatures

The effects of deposition temperature and in-situ post-deposition annealing on the microstructure of co-evaporated Cu(InGa)Se
₂
thin films and on the performance of the resulting solar cell devices have been characterized. Films were deposited at substrate temperatures of 150°C, 300°C and 400°C. Films were also deposited at these temperatures and then annealed in-situ at 550°C for 10 minutes. In as-deposited films without annealing, additional XRD reflections that may be due to a polytypic modification of the chalcopyrite phase were observed. Films deposited at 150°C were Se-rich. Post-deposition annealing caused microstructural changes in all films and improved the resulting solar cells. Only films deposited at 400°C, however, yielded high-efficiency devices after post-deposition annealing that were equivalent to devices made from films grown at 550°C. Films originally deposited at 300°C yielded devices after post-deposition annealing with V
_OC
close to that of devices made from films grown at 550°C, despite smaller grain size.