Hole mobility of GaAs1−xNx grown by chemical beam epitaxy

N induced scattering in GaAs
_1-x
N
_x
films are quantitatively investigated, and reduction of the scattering is demonstrated. The hole mobility of GaAsN films is separated to individual scattering processes by parameter fitting. The mobility limited by the N induced scattering is fitted by the function of ¿N = K
_N
T-
^(0.6±0.2)
. The amount of N induced scattering center increases linearly with increasing N composition. These results suggest that the origin of induced scattering is point defect contained one N atom. In the case of GaAs (001) 10° off substarte, ¿N
^-1
was lower than that grown on a 2° off substrate. It suggests that the hole mobility can be improved by using high step density substrate.