Dielectric property and breakdown study of metal-insulator-metal capacitor

Advanced metal-insulator-metal capacitors with ultra thin (EOT-2.3-5.3 nm) RF sputter-deposited TaAlO_x dielectric layers having excellent electrical properties have been fabricated. With low FCC value, the small change in quadratic VCC value in hysteresis curve is also found which shows a good stability of MIM capacitor. The Weibull distribution function, which is based on the weakest-link theory, is employed to analyze the effect of EOT on the breakdown of the MIM capacitors.