Pulsed laser deposition of doped epitaxial compound semiconductor films

The past decade has seen rapid growth in fundamental studies of the pulsed laser ablation (PLA) process and its application for pulsed laser deposition (PLD). However, there has been relatively little use of PLD to grow doped, epitaxial compound semiconductor films. Nevertheless, it is clear that some of the advantages of the ablation process also should apply for exploratory semiconductor materials research, especially for complex multi-element materials. The authors consider this process for the growth of structurally high quality and highly doped epitaxial II-VI and I-III-VI materials.