Excimer laser-annealed dopant segregated schottky (ELA-DSS) si nanowire gate-all-around (GAA) pFET

We report the first demonstration of pulsed excimer laser annealing (ELA) integrated with dopant segregation method for source/drain junction engineering of gate-all-around (GAA) silicon nanowire P-FETs. It is found that the ultra-fast ELA induces higher boron pile-up at the silicide/silicon junction, resulting in performance enhancement of the devices. The laser annealing improves the average I
_ON
by 37% as well as reduces the parasitic series resistance and improves short channel immunity of the device as compared to the devices without being treated with laser annealing.