The effect of surface charge on the breakdown behaviors of SiC SBD with planar terminations

A numerical model for 4H-SiC Schottky barrier diode (SBD) is proposed in this paper and the breakdown behaviors are achieved. The influences of the surface charge (Q
s
) on the breakdown Characteristic of 4H-SiC SBD with different planar terminations, including junction termination extension (JTE) and field plate (FP) assisted JTE are calculated and investigated in detail.