Hall Measurements on Silicon Field Effect Transistor Structures

In the range of fields used, it seems well established that trapping does not play a major role in these n-p-n field effect devices. This range was extensive enough to indicate that there was no high density of states in the gap from 0.3 eV below the conduction band edge to 0.125 eV below the conduction band edge. Hence, in this range for samples so prepared, the transconductance may be used to study the mobility.