RF characterization of planar dipole antenna for on-chip integration with GaAs-based schottky diode

The design and RF characteristics of planar dipole antenna facilitated with coplanar waveguide structure was presented. The dipole antennas were fabricated on semi-insulated GaAs substrates by using standard photolithography and lift-off process. As expected, it can be seen that the fundamental resonant frequency shift to higher frequency when the length of antenna decreases. Interestingly, the resonant frequencies of antenna are almost unchanged with the variation of antenna width and metal thickness. The width of dipole antenna and metal thickness only has an effect on the magnitude of return loss where the magnitude increases to more negative value with the increase of width and decrease of metal thickness. One of the most promising applications of our proposed dipole antenna is the capability to be integrated directly with AlGaAs/GaAs Schottky diode without any insertion of matching circuit between them.