Investigating the BJT-like behavior of MOSFETs in ultra-deep-submicron CMOS technologies with significant gate current

In conclusion, this work investigated the BJT-like behavior of MOSFETs in a 65 nm CMOS technology with significant gate current. The results show that the effects of I
_G
can be minimized at the expense of power, voltage headroom, and matching. Also, performance metrics similar to BJTs can be used, with caution, to monitor the impact of gate current on MOSFETs.