RF power performance of submicron MESFET on hydrogen terminated polycrystalline diamond

Diamond is in principle the highest performance widegap semiconductor. Its outstanding electronic and thermal properties make it an attractive material for high power radiofrequency (RF) and microwave electron devices. In this paper, the authors present RF power measurements of submicron H-terminated FETs on polycrystalline diamond up to 2 GHz, showing the potential of such substrate for the development of microwave power devices.