Sulfur implant for reducing nickel silicide contact resistance in FinFETs with silicon-carbon source/drain

A novel approach exploiting the concept of NiSi:C/Si:C interface dipole engineering for electron barrier height ¿
_B

^N
reduction is demonstrated in strained n-FinFETs using S
⁺
ion implant. The new approach is simple and promising for reducing contact resistance R
_CSD
in advanced device architectures such as the FinFETs.