Operation regimes of double gated graphene nanoribbon FETs

The unique electronic properties of graphene have ignited active research in the past few years. Though in theory its electronic structure and transport properties are well known, the applicability as channel replacement material in conventional CMOS technology is still an open question. High mobility [1] and high current carrying capacity [2,3] make graphene very attractive, but on the other hand low I
ON
/I
OFF
ratio and the lack of sufficient saturation in I
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are yet unsolved drawbacks. In the past we demonstrated these properties in double-gated graphene nanoribbon field effect transistors (GNR FETs). We successfully achieved I
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/I
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ratios of 10
⁶
at cryogenic temperatures using either top- or back-gates and sublinear output characteristic was observed [3]. Now we present the detailed analysis of the distinct operational modes of such devices at high applied source-drain field.