Fabrication and characterization of buried-gate fin and recess channel MOSFET for high performance and low GIDL current

In this paper, we introduce a buried-gate fin and recess channel MOSFET (BG-FiReFET) for a high performance and low power application. The source/drain region in the BG-FiReFET becomes wider than that of the conventional FinFETs without the epi-process. It can alleviate the burden of the high parasitic resistance. We have adopted a buried-gate structure to avoid GIDL current, which has non-overlapped gate-to-source/drain region.