Carrier type conversion in carbon nanotube field-effect transistors caused by interface fixed charges

In this study the effect of deposition of a high-k gate insulator by atomic layer deposition (ALD) technique on electrical characteristics of carbon nanotube field effects transistors (CNFETs) was investigated. Carrier-type conversion was caused by positive fixed-charges at HfO
₂
/SiO
₂
interface. A technique compatible with Si VLSI technology to control conduction type of CNFETs utilizing interface fixed-charges was proposed.