A high-efficiency 94-GHz 0.15-μm InGaAs/InAlAs/InP monolithic power HEMT amplifier

We report high efficiency W-band power monolithic microwave integrated circuits (MMIC's) using passivated 0.15 μm gate length In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As/InP HEMTs. A 0.15 μm×320 μm single stage InP power HEMT MMIC amplifier demonstrates a maximum power added efficiency of 23% with 40 mW output power and 4.9 dB power gain at 94 GHz. When biased for higher output power, 54 mW output power with 20% power added efficiency was achieved at 94 GHz. These results represent the best combination of efficiency and output power fixtured data reported to date at this frequency.