Electrical determination of the phosphorus content in thin phosphosilicate glass films

We propose a new electrical method for determining the phosphorus content in thin phosphorus silicon glass layers (PSG). The model underlying this method (namely a macroscopic approach, which takes into account the permanent polarisation in the material) is discussed, together with the physical interpretation, based on the specific chemical states of phosphorus incorporated in the host silicon dioxide network and the structural changes thus obtained (viscous flow, P-related trapping centres). The model allows also the computation of a thermal dissipation coefficient. The experimental results are accurate to 5% in respect with theory.