A quasi-three-dimensional analysis of ESD failure mechanism and a new ESD structure with rounded drain corner

A new quasi-three-dimensional analysis technique to verify the Electro-Static Discharge (ESD) failure mechanism in I/O circuitries and an optimized ESD structure with rounded drain corner are proposed and also verified by electro-thermal simulations and experiment. The proposed ESD structure eliminates the current crowding at the drain corner resulting in the dramatical reduction of the peak lattice temperature by more than 20%.