Direct extraction method of SOI MOSFET transistors parameters

An extraction method for small-signal model parameters of Silicon-on-Insulator (SOI) MOS transistors is presented. This technique allows to obtain the intrinsic and extrinsic parameter values for a high frequency small-signal model directly from scattering parameter measurements. Only two sets of measured S-parameters are required, one set in the zero-bias condition at relatively high frequency to obtain values of series parasitic elements (R/sub G/, R/sub D/ and R/sub S/) and the other in the frequency band and the bias conditions of interest to determine the parallel elements of the equivalent circuit.