Abstract:
A novel method of simultaneous extraction of mobility, threshold voltage, and source/drain parasitic resistance are presented. It takes parasitic resistance into account ...Show MoreMetadata
Abstract:
A novel method of simultaneous extraction of mobility, threshold voltage, and source/drain parasitic resistance are presented. It takes parasitic resistance into account and effective on short-channel MOSFETs. In addition to the effectiveness, it is quite simple and easy method to handle because it is based on well known multi-variable least squares method. Curves calculated by using these parameters were compared with the measured ones for MOSFETs with channel length down to 0.25 /spl mu/m and the excellent agreement was obtained.
Date of Conference: 25-28 March 1996
Date Added to IEEE Xplore: 06 August 2002
Print ISBN:0-7803-2783-7