Simultaneous determination of threshold voltage, mobility, and parasitic resistance for short-channel MOSFETs

A novel method of simultaneous extraction of mobility, threshold voltage, and source/drain parasitic resistance are presented. It takes parasitic resistance into account and effective on short-channel MOSFETs. In addition to the effectiveness, it is quite simple and easy method to handle because it is based on well known multi-variable least squares method. Curves calculated by using these parameters were compared with the measured ones for MOSFETs with channel length down to 0.25 /spl mu/m and the excellent agreement was obtained.