A new test structure for the evaluation of the injection-level dependence of carrier mobilities

By using a new three-terminal test structure and a simple equipment, we describe the first experimental method to evaluate the injection dependence of the electron and hole mobilities. An investigation of the role of the geometrical parameters of the test structure highlights its suitability and flexibility of the mobility extraction procedure. Numerical simulation is used to carefully design the test structure and to verify the accuracy of the measurement method. Experimental results obtained from n-type silicon regions are presented and compared to major analytical models.