Matching properties of MOS transistors and delay line chains with self-aligned source/drain contacts

This work has shown for the first time that the matched parameter spreads for MOSFETs with and without self-aligned source/drain contacts are identical. From these observations it can be concluded that source/drain series resistance variations do not contribute significantly to MOS transistor mismatch. An example has been given which shows how to apply matching data to circuits. A similar circuit mismatch methodology could be used to analyse yield problems in clock systems of fast digital logic.